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Systematic study on temperature and time‑varying characteristics of SiC MOSFET static parameters at 200 °C
Xiao Ma  Jianing Wang  Lijian Ding
Vol. 24, No. 2, pp. 269-280, Feb. 2024
10.1007/s43236-023-00711-2

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  ISSN : 1598 - 2092
eISSN : 2093 - 4718